浙江大學(xué)杭州國(guó)際科創(chuàng)中心（以下簡(jiǎn)稱杭州科創(chuàng)中心）是新時(shí)代杭州市與浙江大學(xué)深化全面戰(zhàn)略合作的重大項(xiàng)目。杭州科創(chuàng)中心聚焦物質(zhì)科學(xué)、信息科學(xué)、生命科學(xué)的會(huì)聚融通，推動(dòng)在微納尺度下多學(xué)科交叉的顛覆性技術(shù)革命，支撐引領(lǐng)未來高端制造和未來產(chǎn)業(yè)發(fā)展，打造長(zhǎng)三角一體化發(fā)展的重要?jiǎng)?chuàng)新極，成為具有世界聲譽(yù)的國(guó)際化創(chuàng)新生態(tài)區(qū)和杰出人才匯聚地。為打造一流的人才隊(duì)伍，杭州科創(chuàng)中心現(xiàn)向全球發(fā)布"青年人才卓越計(jì)劃-寬禁帶半導(dǎo)體材料與器件專項(xiàng)"，歡迎優(yōu)秀青年才俊加盟。

該專項(xiàng)依托杭州科創(chuàng)中心先進(jìn)半導(dǎo)體研究院實(shí)施，研究院聚焦寬禁帶半導(dǎo)體領(lǐng)域的國(guó)際前沿和重大科學(xué)問題，瞄準(zhǔn)國(guó)家在信息、能源等領(lǐng)域的重大戰(zhàn)略需求，依托長(zhǎng)三角區(qū)域領(lǐng)先的產(chǎn)業(yè)優(yōu)勢(shì)、浙江大學(xué)雄厚的科研實(shí)力和杭州科創(chuàng)中心創(chuàng)新的體制機(jī)制，打造一個(gè)國(guó)內(nèi)領(lǐng)先、國(guó)際先進(jìn)的前沿技術(shù)創(chuàng)新研發(fā)平臺(tái)，推動(dòng)產(chǎn)學(xué)研深度融合發(fā)展。研究院由杭州科創(chuàng)中心首席科學(xué)家楊德仁院士牽頭建設(shè)，學(xué)術(shù)委員會(huì)主任由鄭有炓院士擔(dān)任，院長(zhǎng)由盛況教授擔(dān)任。研究院將集中建設(shè)超凈實(shí)驗(yàn)室和寬禁帶半導(dǎo)體材料生長(zhǎng)、芯片研制、封裝測(cè)試及應(yīng)用的先進(jìn)研發(fā)設(shè)施和大型儀器設(shè)備。

一、擬重點(diǎn)引進(jìn)方向

1、寬禁帶半導(dǎo)體材料及裝備（氮化鎵、碳化硅、氧化鎵、氮化鋁和金剛石等）；

2、寬禁帶半導(dǎo)體器件（基于碳化硅和氮化鎵等材料的功率器件、射頻器件、芯片集成技術(shù)及其他相關(guān)技術(shù)）；

3、封裝測(cè)試和應(yīng)用（功率器件、射頻器件及其他器件相關(guān)的封裝、模塊集成、測(cè)試技術(shù)和應(yīng)用技術(shù)）；

4、其它相關(guān)領(lǐng)域。

二、待遇及保障條件

1、提供有競(jìng)爭(zhēng)力的薪酬保障（一人一議）；

2、為入選者及其團(tuán)隊(duì)成員提供人才公寓，符合條件者可享受杭州科創(chuàng)中心人才房政策；

3、提供首期（3年）300-500萬(wàn)元的科研資助（可持續(xù)滾動(dòng)資助）；

4、提供100-150㎡辦公實(shí)驗(yàn)空間；

5、提供"專人一站式"服務(wù)，共享科研平臺(tái)大型儀器設(shè)備；

6、入選者中科研業(yè)績(jī)突出且符合浙江大學(xué)人才標(biāo)準(zhǔn)的，可推薦聘至浙江大學(xué)；

7、符合條件的人才可享受杭州市和蕭山區(qū)相應(yīng)的人才政策。

三、申報(bào)條件

1、具有遠(yuǎn)大學(xué)術(shù)志向、創(chuàng)新精神、較強(qiáng)科研能力和社會(huì)責(zé)任感；

2、具有博士學(xué)位，年齡原則上不超過35周歲；

4、對(duì)寬禁帶半導(dǎo)體材料與器件研究領(lǐng)域有足夠的學(xué)科背景支持和較好的研究積累與想法，有堅(jiān)實(shí)的專業(yè)基礎(chǔ)和較深的學(xué)術(shù)造詣；

5、具備以獨(dú)立pi開展研究工作的能力；

6、有寬禁帶材料與器件領(lǐng)域院士或國(guó)際知名專家推薦者優(yōu)先考慮。

四、聯(lián)系方式

聯(lián)系人：楊佩雯

電話：0571-82359099

郵箱：，郵件標(biāo)題注明：應(yīng)聘崗位+本人姓名+學(xué)位+畢業(yè)學(xué)校+所學(xué)專業(yè)+高校人才網(wǎng)

地址：浙江省杭州市蕭山區(qū)建設(shè)三路733號(hào)浙江大學(xué)杭州國(guó)際科創(chuàng)中心

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zju-hangzhou global scientific and technological innovation center recruitment program for "young talent plan"

- recruiting researchers in wide-bandgap semiconductors

zju-hangzhou global scientific and technological innovation center (hic) is a world-class and future-oriented r&d center, jointly established by zhejiang university and hangzhou government. hic's mission is to build an open and integrated international innovation hub that integrates the material sciences, information sciences, and life sciences in the yangtze river delta region.

to build a world-class research team, the hic has launched a new recruitment program: " young talent plan".

advanced semiconductor research institute is an innovative research platform at hic. the institute has advanced cleanroom facilities in the area of wide-bandgap semiconductor materials, device and integrated circuit fabrication, and packaging and testing. supported by the abudant industry resources in the yangtze river delta region, and the r&d capabilities of zhejiang university, the institute aims to become a world-class innovation platform and ecosystem.

1. research areas

1) wide-bandgap semiconductor materials (gan, sic, ga2o3, diamond, aln, etc.)

2) wide-bandgap semiconductor devices (power devices, rf devices and integrated circuits based on sic, gan and other materials)

3) packaging and testing technology (ic packaging, module integration and testing technologies related to power devices, rf devices and other devices)

2. working environment, salary and benefits

1) competitive salary, discussed individually

2) housing benefits

3) start-up research funding of 3-5 million yuan for 3-years (with possible continuation)

4) 100-150 m2 office and lab space

5) one-stop full-range administrative support service

6) if qualified, can be jointly employed as a dual-appointment faculty member in zhejiang university

7) various provincial and municipal talent policies

3. qualifications

1) strong research background, strong motivation in academic/technological career

2) less than 35 years of age

3) have a ph.d. degree

4) have solid academic background in the field of wide-bandgap semiconductor materials and devices

5) have the ability to conduct research work independently as pi

6) recommendation letters by academicians in the field of wide-bandgap materials and devices or internationally renowned experts will be considered in recruiting process

contact: ms. yang

tel.:0571-82359099

email:

address: zju-hangzhou global scientific and technological innovation center, zhejiang university, no. 733, jianshe third road, xiaoshan district, hangzhou, zhejiang province china

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